Applications of RF diodes MCQ’s

Electronics & Communication Engineering RF & Microwave Circuit Design

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF diodes”.

1. Schottky barrier diode is a sophisticated version of the point contact ______________
a) Germanium diode
b) Silicon crystal diode
c) GaAs diode
d) None of the mentioned

2. Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers.
a) True
b) False

3. Classical p-n junction diode cannot be used for high frequency applications because of:
a) High bias voltage
b) High junction capacitance
c) Frequency sensitive
d) High forward biased current

4. As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode:
a) Increases
b) Decreases
c) Remains unchanged
d) None of the mentioned

5. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode.
a) Gain
b) Size
c) Operating frequency
d) No compromise is made on any of the parameter

6. The number of semiconductor layers in a TRAPATT diode is:
a) Two
b) Three
c) Four
d) One

7. A major disadvantage of TRAPATT diode is:
a) Fabrication is costly
b) Low operational bandwidth
c) Low gain
d) High noise figure

8. TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing.
a) True
b) False

9. _________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.
a) CRO
b) Oscilloscope
c) Spectrum analyzer
d) Network analyzer

10. A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap.
a) True
b) False

11. The most important functional unit of a spectrum analyzer is:
a) Mixer
b) IF amplifier
c) Sensitive receiver
d) None of the mentioned

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