Field Effect Transistors MCQ’s

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Field Effect Transistors”.

1. GaAs MESFET –metal semiconductor field effect transistor are one of the widely used categories of FETs.
a) true
b) false

2. At frequencies above 10GHz, MESFET are not suitable for microwave applications due to parasitic effects.
a) true
b) false

3. Field effect transistors are different from BJTs in that they are _________
a) monopolar devices
b) bipolar devices
c) bidirectional device
d) none of the mentioned

4. Advantage of using GaAs in MESFET as compared to use of silicon is:
a) GaAs are cost effective
b) they have higher mobility
c) they have high resistance for flow of current in the reverse direction
d) none of the mentioned

5. The frequency of operation of an FET is limited by:
a) drain to source voltage
b) gate to source voltage
c) gate length
d) effective area of an FET

6. The expression for short circuit current gain of an FET is given by:
a) gm/ ωCgs
b) Ig/gmVc
c) ωCgs/ gm
d) none of the mentioned

7. In MESFET, an applied signal at the gate modulates the electron carriers; this produces _______ in the FET.
a) voltage amplification
b) voltage attenuation
c) electron multiplication
d) electron recombination

8. The S21 parameter for a MESFET is lesser than 1.
a) true
b) false

9. The upper threshold frequency of an FET, where short circuit gain is unity is given by:
a) gm/2πCgs
b) gm/Cgs
c) gm/ 2π
d) none of the mentioned

10. The curve of IDS v/s VDS of an FET does not vary with the gate to source voltage applied.
a) true
b) false

11. High drain current at RF levels is achieved with the biasing and decoupling circuitry for a dual polarity supply.
a) true
b) false

12. The scattering parameter S11 for an FET __________ with increase in the frequency of operation of the transistor.
a) increases
b) decreases
c) remains constant
d) none of the mentioned

13. High-power circuits generally use higher values of:
a) gate to source current
b) drain to source current
c) drain current
d) gate to source voltage

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