Heterojunction BJT – 1 MCQ’s

Electronics & Communication Engineering RF & Microwave Circuit Design

This set of RF & Microwave Circuit Design Multiple Choice Questions & Answers (MCQs) focuses on “Heterojunction BJT – 1″.

1. BJTs are suitable for RF applications because:
a) good performance in terms of frequency
b) power capacity
c) noise characteristics
d) all of the mentioned

2. Bipolar junction transistors have _______ 1/f characteristics hence making them suitable for oscillators.
a) high
b) low
c) constant
d) decreasing exponential

3. BJTs are bipolar junction transistors. The name bipolar is given because:
a) they are made of n type and p type semiconductor
b) they have holes as charge carriers
c) they have electrons as charge carriers
d) none of the mentioned

4. Silicon junction transistors are used as amplifiers at frequency range of about:
a) 5-10 MHz
b) 2-10 GHz
c) 40-50 MHz
d) 12-45 GHz

5. One major disadvantage of BJTs over FETs is that:
a) they have low gain
b) they do not have a good noise figure
c) low bandwidth
d) none of the mentioned

6. The upper frequency limit of BJT depends on the:
a) collector length in the transistor
b) base length
c) emitter length
d) driving voltage

7. At frequency range of about 2-4 GHz, BJTs are preferred over FETs.
a) true
b) false

8. Bipolar junction transistor is a ________ driven device.
a) current
b) voltage
c) power
d) none of the mentioned

9. In the hybrid –π model of a BJT, the capacitance Cc between the base and collector in the hybrid –π model is ignored.
a) true
b) false

10. with the increase in the operating frequency of a BJT, the S22 parameter of the transistor:
a) increases
b) decreases
c) remains constant
d) none of the mentioned

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