Mid – Infrared and Far – Infrared Photodiodes

This set of Optical Communications Multiple Choice Questions & Answers (MCQs) focuses on “Mid Infrared and Far Infrared Photodiodes”.

1. In the development of photodiodes for mid-infrared and far-infrared transmission systems, lattice matching has been a problem when operating at wavelengths ____________
a) 1 µm
b) Greater than 2 µm
c) 2 µm
d) 0.5 µm

2. What is generally used to accommodate a lattice mismatch?
a) Alloys
b) Attenuator
c) Graded buffer layer
d) APD array

3. HgCdTe material system is utilized to fabricate long-wavelength photodiodes.
a) True
b) False

4. Avalanche photodiodes based on HgCdTe are used for ______________ in both the near and far infrared.
a) Dispersion
b) Dislocation
c) Ionization
d) Array applications

5. The detection mechanism in ____________ relies on photo excitation of electrons from confined states in conduction band quantum wells.
a) p-i-n detector
b) Quantum-dot photo detector
c) p-n photodiode
d) Avalanche photodiodes

6. When determining performance of a photo detector ___________ is often used.
a) No. of incident photon
b) No. of electrons collected
c) Responsivity
d) Absorption coefficient

7. The important parameter for exciting an electron with energy required from valence band to conduction band is?
a) Wavelength
b) Absorption coefficient
c) Responsivity
d) Band gap energy

8. __________ is less than or unity for photo detectors.
a) Absorption coefficient
b) Band gap energy
c) Responsivity
d) Quantum efficiency

9. There must be improvement in __________ of an optical fiber communication system.
a) Detector
b) Responsivity
c) Absorption Coefficient
d) Band gap energy

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