The Insulated-Gate FET(MOSFET) – 1 MCQ’s

Electronic Devices & Circuits Electronics & Communication Engineering

This set of Electronic Devices & Circuits Multiple Choice Questions & Answers (MCQs) focuses on “The Insulated-Gate FET(MOSFET) – 1″.

1. What will happen if a metal is used instead of Silicon dioxide in the fabrication of MOSFET?
a) Device burns
b) No changes in the behaviour of MOSFET
c) Input impedance increases
d) Current cannot be generated in MOSFET

2. Necessary condition to create a channel in n-channel enhancement MOSFET is ____________
a) Vgs > Vt
b) Vgs < Vt
c) Vgs < 2Vt
d) 2Vgs > Vt

3. Which of the following is true about MOSFET?
a) There is no direction between channel and gate terminal
b) There exists a channel and gate short connection
c) Channel is not present and cannot be created
d) They have low input impedance

4. Determine the least voltage VDS required to operate E-MOSFET on active region. (Vgs=2V,Vt=0.7V)
a) 1.2V
b) 2V
c) 0V
d) 1.3V

5. Which of the following is the necessary to hold drain current in 0 for n channel E-MOSFET?
a) Vgs > Vt
b) Vgs < Vt
c) Vgs < 2Vt
d) 2Vgs > Vt

6. In a p-channel E-MOSFET, the current becomes constant in saturation region. Which of the following condition depicts this?
a) VDS = 2Vgs-Vt
b) VDS > Vgs-Vt
c) VDS ≤ Vgs-Vt
d) VDS = Vgs

7. Determine the value of K (System constructor constant) for a MOSFET with Vgs=8V,Vt=2V and ID=10A?
a) 0.001A/v2
b) 0.278 A/v2
c) 0.5761A/v2
d) 0.0021A/v2

8. Which of the following is the necessary to hold drain current in 0 for p channel E-MOSFET?
a) Vgs > Vt
b) Vgs < Vt
c) Vgs < 2Vt
d) 2Vgs > Vt

9. In an n-channel E-MOSFET, the current becomes constant in saturation region. Which of the following condition depicts this?
a) VDS = 2Vgs-Vt
b) VDS > Vgs-Vt
c) VDS ≤ Vgs-Vt
d) VDS = Vgs

10. Which of the following is true about n-channel E-MOSFET?
a) Electrons are the majority charge carries
b) Holes are the majority charge carries
c) Both holes and electrons are present in same ratio
d) Neutrons are the charge carriers

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