The Temperature Dependence of P-N Characteristics MCQ’s

Electronic Devices & Circuits Electronics & Communication Engineering

This set of Electronic Devices & Circuits Multiple Choice Questions & Answers (MCQs) focuses on “The Temperature Dependence of P-N Characteristics”.

1. What is the forbidden gap voltage for silicon material?
a) 1.46 V
b) 1.56 V
c) 10 V
d) 1.21 V

2. Which of the following parameters of P-N junction diode increases with temperature.
a) Cut in voltage
b) Reverse saturation current.
c) Ideality factor
d) Resistance

3. The magnitude of the electric charge (e) is given by ____________
a) -1.6*10-19 C
b) 1.6*10-19 C
c) 9.11*10-31 C
d) 1.637*10-37 C

4. Which of the following diodes do not exhibits a constant reverse saturation current with the change in reverse saturation voltage.
a) 1N909
b) 1N405
c) 1N207
d) 1N676

5. As the temperature to the P-N junction increases the current increases due to?
a) Leakage in bias region
b) Electron-hole pair
c) Leakage in P region
d) Leakage in N region

6. What will be the decrease of barrier voltage with the rise in 10C in temperature?
a) 10V
b) 1mV
c) 10mV
d) 2mV

7. Which of these P-N junction characteristics are not dependent on temperature.
a) Junction resistance
b) Reverse saturation current
c) Bias current
d) Barrier voltage

8. By what percentage the reverse saturation current increases with 10 C rise in the temperature.
a) 25%
b) 12.5%
c) 50%
d) 7%

9. What will be the reverse saturation current in the junction when the voltage across the junction is 0?
a) 0.3A
b) 0.7A
c) 0A
d) 1.24A

10. The breakdown voltage of the P-N junction diode decreases due to the increase in.
a) Reverse saturation current
b) Reverse leakage current
c) Bias voltage
d) Barrier voltage

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